SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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Name: SOT893L A44 Silicon Power Transistor NPN Collector Base Voltage 400V
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : SOT-89-3L A44

Collector-Base Voltage : 400V

Junction Temperature : 150 ℃

Tstg : -55～+150℃

Material : Silicon

Collector Current : 600 mA

Collector Power Dissipation : 500mW

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SOT-89-3L Plastic-Encapsulate Transistors A44 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :A44

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	400	V
VCEO	Collector-Emitter Voltage	400	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	200	mA
ICM	Collector Current -Pulsed	300	mA
P_C	Collector Power Dissipation	500	mW
RθJA	Thermal Resistance from Junction to Ambient	250	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter	Symbol	T est conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=100µA,I_E=0	400			V
Collector-emitter breakdown voltage	V(BR)CEO*	I_C=1mA,I_B=0	400			V
Emitter-base breakdown voltage	V(BR)EBO	I_E=10µA,I_C=0	6			V
Collector cut-off current	ICBO	V_CB=400V,I_E=0			0.1	µA
Emitter cut-off current	IEBO	V_EB=4V,I_C=0			0.1	µA
DC current gain	hFE(1)*	V_CE=10V, I_C=1mA	40
	hFE(2)*	V_CE=10V, I_C=10mA	50		200
	hFE(3)*	V_CE=10V, I_C=50mA	45
	hFE(4)*	V_CE=10V, I_C=100mA	40
Collector-emitter saturation voltage	VCE(sat)*	I_C=1mA,I_B=0.1mA			0.4	V
		I_C=10mA,I_B=1mA			0.5	V
		I_C=50mA,I_B=5mA			0.75	V
Base-emitter saturation voltage	VBE(sat)*	I_C=10mA,I_B=1mA			0.75	V
Collector output capacitance	Cob	V_CB=20V, I_E=0, f=1MHz			7	pF
Emitter input capacitance	Cib	V_BE=0.5V, I_C=0, f=1MHz			130	pF

Typical Characteristics

Package Outline Dimensions

SOT-89-3L Suggested Pad Layout

SOT-89-3L Tape and Reel
SOT-89-3L A44 Silicon Power Transistor NPN Collector Base Voltage 400V

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