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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

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A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : A42

Collector-Base Voltage : 310V

Emitter-Base Voltage : 5V

Tstg : -55～+150℃

Material : Silicon

Collector Current : 600 mA

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SOT-89-3L Plastic-Encapsulate Transistors A42 TRANSISTOR (NPN)

FEATURE

Low Collector-Emitter Saturation Voltage

High Breakdown Voltage

Marking :D965A

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 310 V
VCEO Collector-Emitter Voltage 305 V
VEBO Emitter-Base Voltage 5 V
IC Collector Current -Continuous 200 mA
ICM Collector Current -Pulsed 500 mA
PC Collector Power Dissipation 500 mW
RθJA Thermal Resistance from Junction to Ambient 250 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC=100µA,IE=0 310 V
Collector-emitter breakdown voltage V(BR)CEO IC=1mA,IB=0 305 V
Emitter-base breakdown voltage V(BR)EBO IE=100µA,IC=0 5 V

Collector cut-off current

 ICBO VCB=200V,IE=0 0.25 µA

ICEX

 VCE=100V,VX=5V 5 µA
VCE=300V,VX=5V 10 µA
Emitter cut-off current IEBO VEB=5V,IC=0 0.1 µA

DC current gain

 hFE(1) VCE=10V, IC=1mA 60
hFE(2) VCE=10V, IC=10mA 100 300
hFE(3) VCE=10V, IC=30mA 75
Collector-emitter saturation voltage VCE(sat) IC=20mA,IB=2mA 0.2 V
Base-emitter saturation voltage VBE(sat) IC=20mA,IB=2mA 0.9 V
Transition frequency fT VCE=20V,IC=10mA, f=30MHz 50 MHz


Typical Characteristics

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047



A42 Silicon NPN Power Transistors , NPN Power Transistor High Current

SOT-89-3L Suggested Pad Layout

A42 Silicon NPN Power Transistors , NPN Power Transistor High Current


SOT-89-3L Tape and Reel
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current
A42 Silicon NPN Power Transistors , NPN Power Transistor High Current



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