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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D882

Collector-Base Voltage : 40V

Collector Power Dissipation : 0.5W

Emitter-Base Voltage : 6V

Application : mobile power supply/ led driver/motor control

Collector Current- Pulsed : -0.3A

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SOT-89-3L Plastic-Encapsulate Transistors D882 TRANSISTOR (NPN)

FEATURE

Power dissipation

Marking :A94

MAXIMUM RATINGS (Ta=25℃ unless otherwise noted)

Symbol Parameter Value Unit
VCBO Collector-Base Voltage 40 V
VCEO Collector-Emitter Voltage 30 V
VEBO Emitter-Base Voltage 6 V
IC Collector Current -Continuous 3 A
PC Collector Power Dissipation 0.5 W

RӨJA

Thermal Resistance from Junction to Ambient

250

℃/W
TJ Junction Temperature 150
Tstg Storage Temperature -55~150




ELECTRICAL CHARACTERISTICS (Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO IC = 100μA, IE=0 40 V
Collector-emitter breakdown voltage V(BR)CEO IC = 10mA, IB=0 30 V
Emitter-base breakdown voltage V(BR)EBO IE= 100μA, IC=0 6 V
Collector cut-off current ICBO VCB= 40V, IE=0 1 µA
Collector cut-off current ICEO VCE= 30V, IB=0 10 µA
Emitter cut-off current IEBO VEB= 6V, IC=0 1 µA

DC current gain

hFE(1) VCE=2V, IC= 1A 60 400
hFE(2) VCE=2V, IC= 100mA 32
Collector-emitter saturation voltage VCE(sat) IC= 2A, IB= 0.2 A 0.5 V
Base-emitter saturation voltage VBE(sat) IC= 2A, IB= 0.2 A 1.5 V

Transition frequency

fT

VCE= 5V , Ic=0.1A

f =10MHz

50

MHz


CLASSIFICATION OF hFE(1)

Rank R O Y GR
Range 60-120 100-200 160-320 200-400

Typical Characteristics

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed SwitchingD882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching


Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min Max Min Max
A 1.400 1.600 0.055 0.063
b 0.320 0.520 0.013 0.020
b1 0.400 0.580 0.016 0.023
c 0.350 0.440 0.014 0.017
D 4.400 4.600 0.173 0.181
D1 1.550 REF. 0.061 REF.
E 2.300 2.600 0.091 0.102
E1 3.940 4.250 0.155 0.167
e 1.500 TYP. 0.060 TYP.
e1 3.000 TYP. 0.118 TYP.
L 0.900 1.200 0.035 0.047



SOT-89-3L Suggested Pad Layout

D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching

SOT-89-3L Tape and Reel
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching
D882 Silicon Power Transistor Collector Power Dissipation 0.5W High Speed Switching



Product Tags:

high frequency transistor

      

power switch transistor

      
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