3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

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3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

Name: 3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : 3DD13005HD55

Collector Power Dissipation : 1.5W

Junction Temperature : 150 ℃

VCBO : 600V

Product name : semiconductor triode type

Collector Current : 3.5A

Type : Triode Transistor

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TO-126 Plastic-Encapsulate Transistors 3DD13005HD55 TRANSISTOR (NPN)

FEATURE

Ÿ Power Switching Applications

Ÿ Good high temperature

Ÿ Low saturation voltage

Ÿ High speed switching

MARKING

JCET Logo 13005HD55=Device code

3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
3DD13005HD55	TO-126	Bulk	200pcs/Bag
3DD13005HD55-TU	TO-126	Tube	60pcs/Tube

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	800	V
VCEO	Collector-Emitter Voltage	450	V
VEBO	Emitter-Base Voltage	9	V
I_C	Collector Current	3.5	A
P_C	Collector Power Dissipation	1.5	W
RθJA	Thermal Resistance From Junction To Ambient	83.3	℃/W
T_j	Junction Temperature	150	℃
Tstg	Storage Temperature	-55~+150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)CBO	I_C=1mA,I_E=0	800			V
Collector-emitter breakdown voltage	V(BR)CEO*	I_C=10mA,I_B=0	450			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 1mA,I_C=0	9			V
Collector cut-off current	ICBO	V_CB=700V,I_E=0			100	μA
Collector cut-off current	ICEO	V_CE=450V,I_B=0			100	μA
Emitter cut-off current	IEBO	V_EB=9V,I_C=0			100	μA
DC current gain	hFE(1) *	V_CE=5V, I_C=1A	10		40
	hFE(2) *	V_CE=5V, I_C=5mA	10
	hFE(3) *	V_CE=5V, I_C=2A	5
Collector-emitter saturation voltage	VCE(sat)1	I_C=1A,I_B=200mA			0.3	V
Collector-emitter saturation voltage	VCE(sat)2	I_C=2A,I_B=500mA			0.6	V
Base-emitter saturation voltage	VBE(sat)1	I_C=2A,I_B=500mA			1.2	V
Base-emitter saturation voltage	VBE(sat)2	I_C=500mA,I_B=100mA			1	V
Emitter-collector forward voltage	VF_EC	I_C=2A			2	V
Transition frequency	f_T	V_CE=10V,I_C=500mA	5			MHZ
Storage time	ts	I_C=250mA (UI9600)			5	µs

Typical Characteristics

3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

TO-92 Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	2.500	2.900	0.098	0.114
A1	1.100	1.500	0.043	0.059
b	0.660	0.860	0.026	0.034
b1	1.170	1.370	0.046	0.054
c	0.450	0.600	0.018	0.024
D	7.400	7.800	0.291	0.307
E	10.600	11.000	0.417	0.433
e	2.290 TYP		0.090 TYP
e1	4.480	4.680	0.176	0.184
h	0.000	0.300	0.000	0.012
L	15.300	15.700	0.602	0.618
L1	2.100	2.300	0.083	0.091
P	3.900	4.100	0.154	0.161
Φ	3.000	3.200	0.118	0.126

3DD13005HD55 Tip Power Transistors VCBO 600V Semiconductor Triode Type

Product Tags:

tip series transistors

high power pnp transistor

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