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D965 NPN Transistor Circuit , NPN Power Transistor High Performance

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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D965 NPN Transistor Circuit , NPN Power Transistor High Performance

Name: D965 NPN Transistor Circuit NPN Power Transistor High Performance
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D965

VCBO : 42V

VCEO : 22V

VEBO : 6V

Product name : semiconductor triode type

Collector Power Dissipation : 750mW

Tj : 150Š

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TO-92 Plastic-Encapsulate Transistors D965 TRANSISTOR (NPN)

FEATURE

Ÿ Audio Amplifier

Ÿ Flash Unit of Camera

Ÿ Switching Circuit

MARKING

D965=Device code

Solid dot=Green molding compound device,

if none,the normal device

Z=Rank of hFE, XXX=Code

D965 NPN Transistor Circuit , NPN Power Transistor High Performance

ORDERING INFORMATION

Part Number	Package	Packing Method	Pack Quantity
D965	TO-92	Bulk	1000pcs/Bag
D965-TA	TO-92	Tape	2000pcs/Box

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Para meter	Value	Unit
VCBO	Collector-Base Voltage	42	V
VCEO	Collector-Emitter Voltage	22	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	5	A
P_D	Collector Power Dissipation	750	mW
R0 JA	Thermal Resist ance f rom Junction to Ambient	166.7	Š / W
T_j	Junction Temperature	150	Š
Tstg	St orage Temperature	-55 ~+150	Š

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	MIN	TYP	MAX	UNIT
Collector-base breakdown voltage	V(BR)CBO	I_C=0.1mA, I_E=0	42			V
Collector-emitter breakdown voltage	V(BR)CEO	I_C=1mA, I_B=0	22			V
Emitter-base breakdown voltage	V(BR)EBO	I_E= 10µA, I_C=0	6			V
Collector cut-off current	ICBO	V_CB=30V,I_E=0			0.1	µA
Emitter cut-off current	IEBO	V_EB=6V, I_C=0			0.1	µA
DC current gain	hFE(1)	V_CE=2V, I_C= 0.15 mA	150
	hFE(2)	V_CE= 2V,I_C = 500 mA	340		2000
	hFE(3)	V_CE=2V, I_C = 2A	150
Collector-emitter saturation voltage	VCE(sat)	I_C=3000mA,I_B=100 mA			0.35	V
Transition frequency	f_T	V_CE=6V, I_C=50mA,f=30MHz		150		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	T	V
Range	340-600	560-950	900-2000

Typical Characteristics

D965 NPN Transistor Circuit , NPN Power Transistor High Performance

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min	Max	Min	Max
A	3.300	3.700	0.130	0.146
A1	1.100	1.400	0.043	0.055
b	0.380	0.550	0.015	0.022
c	0.360	0.510	0.014	0.020
D	4.300	4.700	0.169	0.185
D1	3.430		0.135
E	4.300	4.700	0.169	0.185
e	1.270 TYP		0.050 TYP
e1	2.440	2.640	0.096	0.104
L	14.100	14.500	0.555	0.571
0		1.600		0.063
h	0.000	0.380	0.000	0.015

Product Tags:

tip series transistors

high power pnp transistor