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SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

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SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : B772

Power Dissipation : 1.5W

FEATURES : Low Collector-emitter Saturation Voltage

Collector Dissipation : 1.25W

Usage : Electronic Components

Collector-Base Voltage : 40V

Case : Tape/Tray/Reel

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SOT-89-3L Plastic-Encapsulate Transistors B772 TRANSISTOR (NPN)

FEATURE

Low Speed switching

Symbol Parameter Value Unit
VCBO Collector-Base Voltage -40 V
VCEO Collector-Emitter Voltage -30 V
VEBO Emitter-Base Voltage -6 V
IC Collector Current -Continuous -3 A
PC Collector Dissipation 1.25 W
RӨJA Thermal Resistance from Junction to Ambient 100 ℃/W
TJ Junction Temperature 150 ℃
Tstg Storage Temperature -55~+150 ℃

AXIMUM RATINGS(Ta=25℃ unless otherwise noted)

ELECTRICAL CHARACTERISTICS(Ta=25℃ unless otherwise specified)

Parameter Symbol Test conditions Min Typ Max Unit
Collector-base breakdown voltage V(BR)CBO Ic=-100μA, IE=0 -40 V
Collector-emitter breakdown voltage V(BR)CEO IC=-10mA, IB=0 -30 V
Emitter-base breakdown voltage V(BR)EBO IE=-100 μA,IC=0 -6 V
Collector cut-off current ICBO VCB=-40 V, IE=0 -1 μA
Collector cut-off current ICEO VCE=-30 V IB=0 -10 μA
Emitter cut-off current IEBO VEB=-6V,IC=0 -1 μA

DC current gain

 hFE(1) VCE=-2V,IC=-1A 60 400
hFE(2) VCE=-2V,IC=-100mA 32
Collector-emitter saturation voltage VCE(sat) IC=-2A,IB=-0.2A -0.5 V
Base-emitter saturation voltage VBE(sat) IC=-2A,IB=-0.2A -1.5 V

Transition frequency

 fT

VCE=-5V,IC=-0.1A

f=10MHz

50

MHz



CLASSIFICATION OF hFE(1)

Rank R O Y GR
Range 60-120 100-200 160-320

200-400




Typical Characteristics



SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

Package Outline Dimensions

Symbol Dimensions In Millimeters Dimensions In Inches
Min. Max. Min. Max.
A —— 1.800 —— 0.071
A1 0.020 0.100 0.001 0.004
A2 1.500 1.700 0.059 0.067
b 0.660 0.840 0.026 0.033
b1 2.900 3.100 0.114 0.122
c 0.230 0.350 0.009 0.014
D 6.300 6.700 0.248 0.264
E 6.700 7.300 0.264 0.287
E1 3.300 3.700 0.130 0.146
e 2.300(BSC) 0.091(BSC)
L 0.750 —— 0.030 ——
θ 0° 10° 0° 10°


SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage


SOT-89-3L Suggested Pad Layout

SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage

SOT-89-3L Tape and Reel
SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage
SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage
SOT-89-3L B772 Tip Power Transistors Low Collector Emitter Saturation Voltage



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