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Original Complementary Power Transistors / Field Effect Transistor AP5N10LI

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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Original Complementary Power Transistors / Field Effect Transistor AP5N10LI

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Brand Name : Hua Xuan Yang

Model Number : AP5N10LI

Certification : RoHS、SGS

Place of Origin : ShenZhen China

MOQ : Negotiation

Price : Negotiated

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Product name : Complementary Power Transistors

Model : AP5N10LI

Marking : MA6S

Pack : SOT23

VDSDrain-Source Voltage : 100V

VGSGate-Sou rce Voltage : ±20A

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Original Complementary Power Transistors / Field Effect Transistor AP5N10LI

Complementary Power Transistors Description

The AP5N10LI uses advanced trench technology to provide excellent R DS(ON) , low gate charge and operation with gate voltages as low as 4.5V. This device is suitable for use as a Battery protection or in other Switching application.

Complementary Power Transistors Features

VDS= 100V I D = 5A

RDS(ON) < 140mΩ @ VGS=4.5V Application

Battery protection

Load switch

Uninterruptible power supply

Package Marking and Ordering Information

Product ID Pack Marking Qty(PCS)
AP5N10LI SOT23-6 MA6S 3000

Absolute Maximum Ratings at Tj=25℃ unless otherwise noted

Parameter Symbol Value Unit
Drain source voltage VDS 100 V
Gate source voltage VGS ±20 V
Continuous drain current , TC=25 ℃ ID 5 A
Pulsed drain current , TC =25 ℃ ID, pulse 15 A
Power dissipation , T C=25 ℃

P

D

17 W
Single pulsed avalanche energy 5) EAS 1.2 mJ
Operation and storage temperature Tstg,Tj -55 to 150
Thermal resistance, junction-case RθJC 7.4 ℃/W
Thermal resistance, junction-ambient4) RθJA 62 ℃/W

Electrical Characteristics at T AP5N10LI 100V N-Channel Enhancement Mode MOSFET j=25 ℃ unless otherwise specified

Symbol Parameter Test condition Min. Typ. Max. Unit
BVDSS Drain-source breakdown voltage V =0 V, ID=250 μA 100 V
VGS(th) Gate threshold voltage V =V , ID=250 μA 1.2 1.5 2.5 V
RDS(ON) Drain-source on-state resistance VGS=10 V, ID=5 A 110 140
RDS(ON) Drain-source on-state resistance V =4.5 V, ID=3 A 160 180

IGSS

Gate-source leakage current

V =20 V 100

nA

V =-20 V -100
IDSS Drain-source leakage current VDS=100 V, VGS=0 V 1 uA
Ciss Input capacitance V =0 V, 206.1 pF
Coss Output capacitance 28.9 pF
Crss Reverse transfer capacitance 1.4 pF
td(on) Turn-on delay time

VGS=10 V,

VDS=50 V,

14.7 ns
tr Rise time 3.5 ns
td(off) Turn-off delay time 20.9 ns

t

f

Fall time 2.7 ns
Qg Total gate charge 4.3 nC
Qgs Gate-source charge 1.5 nC
Qgd Gate-drain charge 1.1 nC
Vplateau Gate plateau voltage 5.0 V
IS Diode forward current

VGS<Vth

7

A

ISP Pulsed source current 21
VSD Diode forward voltage IS=7 A, VGS=0 V 1.0 V

t

rr

Reverse recovery time 32.1 ns
Qrr Reverse recovery charge 39.4 nC
Irrm Peak reverse recovery current 2.1 A
Symbol Parameter Test condition Min. Typ. Max. Unit
BVDSS Drain-source breakdown voltage V =0 V, ID=250 μA 100 V
VGS(th) Gate threshold voltage V =V , ID=250 μA 1.2 1.5 2.5 V
RDS(ON) Drain-source on-state resistance VGS=10 V, ID=5 A 110 140
RDS(ON) Drain-source on-state resistance V =4.5 V, ID=3 A 160 180

IGSS

Gate-source leakage current

V =20 V 100

nA

V =-20 V -100
IDSS Drain-source leakage current VDS=100 V, VGS=0 V 1 uA
Ciss Input capacitance V =0 V, 206.1 pF
Coss Output capacitance 28.9 pF
Crss Reverse transfer capacitance 1.4 pF
td(on) Turn-on delay time

VGS=10 V,

VDS=50 V,

14.7 ns
tr Rise time 3.5 ns
td(off) Turn-off delay time 20.9 ns

t

f

Fall time 2.7 ns
Qg Total gate charge 4.3 nC
Qgs Gate-source charge 1.5 nC
Qgd Gate-drain charge 1.1 nC
Vplateau Gate plateau voltage 5.0 V
IS Diode forward current

VGS<Vth

7

A

ISP Pulsed source current 21
VSD Diode forward voltage IS=7 A, VGS=0 V 1.0 V

t

rr

Reverse recovery time 32.1 ns
Qrr Reverse recovery charge 39.4 nC
Irrm Peak reverse recovery current 2.1 A

Note

1) Calculated continuous current based on maximum allowable junction temperature.

2) Repetitive rating; pulse width limited by max. junction temperature.

3) Pd is based on max. junction temperature, using junction-case thermal resistance.

4) The value of RθJA is measured with the device mounted on 1 in 2 FR-4 board with 2oz. Copper, in a still air environment with T a =25 °C. 5) VDD=50 V, RG=50 Ω, L=0.3 mH, starting Tj=25 °C.

Original Complementary Power Transistors / Field Effect Transistor AP5N10LI

Attention

1,Any and all APM Microelectronics products described or contained herein do not have specifications that can handle applications that require extremely high levels of reliability, such as life support systems, aircraft's control systems, or other applications whose failure can be reasonably expected to result in serious physical and/or material damage. Consult with your APM Microelectronics representative nearest you before using any APM Microelectronics products described or contained herein in such applications.

2,APM Microelectronics assumes no responsibility for equipment failures that result from using products at values that exceed, even momentarily, rated values (such as maximum ratings, operating condition ranges, or other parameters) listed in products specifications of any and all APM Microelectronics products described or contained herein.

3, Specifications of any and all APM Microelectronics products described or contained here instipulate the performance, characteristics, and functions of the described products in the independent state, and are not guarantees of the performance, characteristics, and functions of the described products as mounted in the customer’s products or equipment. To verify symptoms and states that cannot be evaluated in an independent device, the customer should always evaluate and test devices mounted in the customer’s products or equipment.

4, APM Microelectronics Semiconductor CO., LTD. strives to supply high quality high reliability products. However, any and all semiconductor products fail with some probability. It is possible that these probabilistic failures could give rise to accidents or events that could endanger human lives that could give rise to smoke or fire, or that could cause damage to other property. Whendesigning equipment, adopt safety measures so that these kinds of accidents or events cannot occur. Such measures include but are not limited to protective circuits and error prevention circuits for safe design, redundant design,and structural design.

5,In the event that any or all APM Microelectronics products(including technical data, services) described or contained herein are controlled under any of applicable local export control laws and regulations, such products must not be exported without obtaining the export license from the authorities concerned in accordance with the above law.

6, No part of this publication may be reproduced or transmitted in any form or by any means,electronic or mechanical, including photocopying and recording, or any information storage or retrieval system, or otherwise, without the prior written permission of APM Microelectronics Semiconductor CO., LTD.

7, Information (including circuit diagrams and circuit parameters) herein is for example only; it is not guaranteed for volume production. APM Microelectronics believes information herein is accurate and reliable, but no guarantees are made or implied regarding its use or any infringements of intellectual property rights or other rights of third parties.

, Any and all information described or contained herein are subject to change without notice due to product/technology improvement,etc. When designing equipment, refer to the "Delivery Specification" for the APM Microelectronics product that you Intend to use.


Product Tags:

n channel mosfet transistor

      

high voltage transistor

      
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