Electronic Component AP2308GEN SOT-23 Advantage Price For Original Stock
Description
Advanced Power MOSFETs utilized advanced processing techniques to achieve the lowest possible on-resistance, extremely efficient and cost- effectiveness device.
The SOT-23S package is widely preferred for commercial-industrial surface mount applications and suited for low voltage applications such as DC/DC converters.
Absolute Maximum Ratings@Tj=25oC(unless otherwise specified)
| Symbol |
Parameter |
Rating |
Units |
| VDS |
Drain-Source Voltage |
20 |
V |
| VGS |
Gate-Source Voltage |
+8 |
V |
| ID@TA=25℃ |
Drain Current3, VGS @ 4.5V |
1.2 |
A |
| ID@TA=70℃ |
Drain Current3, VGS @ 4.5V |
1 |
A |
| IDM |
Pulsed Drain Current1 |
3.6 |
A |
| PD@TA=25℃ |
Total Power Dissipation |
0.69 |
W |
| TSTG |
Storage Temperature Range |
-55 to 150 |
℃ |
| TJ |
Operating Junction Temperature Range |
-55 to 150 |
℃ |
Thermal Data
| Symbol |
Parameter |
Value |
Unit |
| Rthj-a |
Maximum Thermal Resistance, Junction-ambient3 |
180 |
℃/W |
AP2308GE
Electrical Characteristics@Tj=25oC(unless otherwise specified)
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| BVDSS |
Drain-Source Breakdown Voltage |
VGS=0V, ID=250uA |
20 |
- |
- |
V |
| RDS(ON) |
Static Drain-Source On-Resistance2 |
VGS=4.5V, ID=1.2A |
- |
- |
600 |
mΩ |
| VGS=2.5V, ID=0.3A |
- |
- |
2 |
Ω |
| VGS(th) |
Gate Threshold Voltage |
VDS=VGS, ID=250uA |
0.5 |
- |
1.25 |
V |
| gfs |
Forward Transconductance |
VDS=5V, ID=1.2A |
- |
1 |
- |
S |
| IDSS |
Drain-Source Leakage Current |
VDS=20V, VGS=0V |
- |
- |
1 |
uA |
| IGSS |
Gate-Source Leakage |
VGS=+8V, VDS=0V |
- |
- |
+30 |
uA |
| Qg |
Total Gate Charge |
ID=1.2A VDS=16V
VGS=4.5V
|
- |
1.2 |
2 |
nC |
| Qgs |
Gate-Source Charge |
- |
0.4 |
- |
nC |
| Qgd |
Gate-Drain ("Miller") Charge |
- |
0.3 |
- |
nC |
| td(on) |
Turn-on Delay Time |
VDS=10V ID=1.2A RG=3.3Ω
VGS=5V
|
- |
17 |
- |
ns |
| tr |
Rise Time |
- |
36 |
- |
ns |
| td(off) |
Turn-off Delay Time |
- |
76 |
- |
ns |
| tf |
Fall Time |
- |
73 |
- |
ns |
| Ciss |
Input Capacitance |
VGS=0V
.VDS=10V
f=1.0MHz
|
- |
37 |
60 |
pF |
| Coss |
Output Capacitance |
- |
17 |
- |
pF |
| Crss |
Reverse Transfer Capacitance |
- |
13 |
- |
pF |
Source-Drain Diode
| Symbol |
Parameter |
Test Conditions |
Min. |
Typ. |
Max. |
Units |
| VSD |
Forward On Voltage2 |
IS=1.2A, VGS=0V |
- |
- |
1.2 |
V |
Notes:
1.Pulse width limited by Max. junction temperature.
2.Pulse test
3.Surface mounted on 1 in2 copper pad of FR4 board, t < 10s ; 400℃/W when mounted on min. copper pad.
Items:New AP2308GEN
Part number: AP2308GEN
Package: Electronic components
Electronic Components: AP2308GEN
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Drive IC AP2308GEN SOT-23 0.69W 3.6A Mosfet Power Transistor Images
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