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D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

Name: D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : D882M

Collector-Base VoltageCollector-Base Voltage : 40v

Collector-Emitter Voltage : 30v

Emitter-Base Voltage : 6V

Power mosfet transistor : TO-252-2L Plastic-Encapsulate

Type : semiconductor triode type

Usage : Electronic Components

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TO-252-2L Plastic-Encapsulate Transistors D882M TRANSISTOR (NPN)

FEATURE

Power Dissipation

MAXIMUM RATINGS (T_a =25 Š unless otherwise noted)

Symbol	Parameter	Value	Unit
VCBO	Collector-Base Voltage	40	V
VCEO	Collector-Emitter Voltage	30	V
VEBO	Emitter-Base Voltage	6	V
I_C	Collector Current -Continuous	3	A
P_C	Collector Power Dissipation	1.25	W
T_J	Junction Temperature	150	℃
Tstg	Storage Temperature	-55-150	℃

ELECTRICAL CHARACTERISTICS

Ta=25 Š unless otherwise specified

Parameter	Symbol	Test conditions	Min	Typ	Max	Unit
Collector-base breakdown voltage	V(BR)_CBO	I_C = 100μA, I_E=0	40			V
Collector-emitter breakdown voltage	V(BR)_CEO	I_C = 10mA, I_B=0	30			V
Emitter-base breakdown voltage	V(BR)_EBO	I_E= 100μA, I_C=0	6			V
Collector cut-off current	ICBO	V_CB= 40 V, I_E=0			1	µA
Collector cut-off current	ICEO	V_CE= 30 V, I_B=0			10	µA
Emitter cut-off current	IEBO	V_EB= 6 V, I_C=0			1	µA
DC current gain	hFE	V_CE= 2 V, I_C= 1A	60		400
Collector-emitter saturation voltage	VCE (sat)	I_C= 2A, I_B= 0.2 A			0.5	V
Base-emitter saturation voltage	VBE (sat)	I_C= 2A, I_B= 0.2 A			1.5	V
Transition frequency	f_T	V_CE= 5V, I_C=0.1A f =10MHz		90		MHz

CLASSIFICATION OF h_FE(2)

Rank	R	O	Y	GR
Range	60-120	100-200	160-320	200-400

Typical Characteristics

D882M NPN Transistor Switch Emitter Base Voltage 6V High Efficiency

Package Outline Dimensions

Symbol	Dimensions In Millimeters		Dimensions In Inches
	Min.	Max.	Min.	Max.
A	2.200	2.380	0.087	0.094
A1	0.000	0.100	0.000	0.004
B	0.800	1.400	0.031	0.055
b	0.710	0.810	0.028	0.032
c	0.460	0.560	0.018	0.022
c1	0.460	0.560	0.018	0.022
D	6.500	6.700	0.256	0.264
D1	5.130	5.460	0.202	0.215
E	6.000	6.200	0.236	0.244
e	2.286 TYP.		0.090 TYP.
e1	4.327	4.727	0.170	0.186
M	1.778REF.		0.070REF.
N	0.762REF.		0.018REF.
L	9.800	10.400	0.386	0.409
L1	2.9REF.		0.114REF.
L2	1.400	1.700	0.055	0.067
V	4.830 REF.		0.190 REF.
ĭ	1.100	1.300	0.043	0.0±1

Product Tags:

tip series transistors

high power pnp transistor