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HXY4441 30V P-Channel MOSFET

Shenzhen Hua Xuan Yang Electronics Co.,Ltd
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HXY4441 30V P-Channel MOSFET

Brand Name : Hua Xuan Yang

Model Number : HXY4441

Certification : RoHS、SGS

Place of Origin : ShenZhen China

MOQ : 1000-2000 PCS

Price : Negotiated

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Delivery Time : 1 - 2 Weeks

Packaging Details : Boxed

Product name : Mosfet Power Transistor

VDS : 30V

APPLICATION : High Frequency Circuits

FEATURE : Low Gate Charge

VGS : 30V

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HXY4441 30V P-Channel MOSFET

Description

HXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFET
A. The value of RθJA is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, in a still air environment with TA =25°C. The value in any given application depends on the user's specific board design.
B. The power dissipation PD is based on TJ(MAX)=150°C, using ≤ 10s junction-to-ambient thermal resistance.
C. Repetitive rating, pulse width limited by junction temperature TJ(MAX)=150°C. Ratings are based on low frequency and duty cycles to keep initialTJ=25°C.
D. The RθJA is the sum of the thermal impedence from junction to lead RθJL and lead to ambient.
E. The static characteristics in Figures 1 to 6 are obtained using <300µs pulses, duty cycle 0.5% max.
F. These curves are based on the junction-to-ambient thermal impedence which is measured with the device mounted on 1in2 FR-4 board with 2oz. Copper, assuming a maximum junction temperature of TJ(MAX)=150°C. The SOA curve provides a single pulse rating.
HXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFETHXY4441 30V P-Channel MOSFET


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high current mosfet switch

      

high voltage transistor

      
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