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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : WSF6012

Product name : Mosfet Power Transistor

Junction temperature : 150℃

Material : Silicon

Case : Tape/Tray/Reel

Type : mosfet transistor

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QM4803D​ N-Ch and P-Channel MOSFET

Description

The WSF6012 is the highest performance

trench N-ch and P-ch MOSFET with extreme

high cell density , which provide excellent

RDSON and gate charge for most of the

synchronous buck converter applications .

The WSF6012 meet the RoHS and Green

Product requirement , 100% EAS

guaranteed with full function reliability

approved.

Features
z Advanced high cell density Trench technology
z Super Low Gate Charge
z Excellent CdV/dt effect decline
z 100% EAS Guaranteed
z Green Device Available

Applications

  • z High Frequency Point-of-Load Synchronous Buck Converter for MB/NB/UMPC/VGA
  • z Networking DC-DC Power System
  • z CCFL Back-light Inverter

Product Summery
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Absolute Maximum Ratings

WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Thermal Data
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
N-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Guaranteed Avalanche Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Diode Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Note :
1. The data tested by surface mounted on a 1 inch2 FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature
4. The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
P-Channel Electrical Characteristics (TJ=25 ℃, unless otherwise noted)
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Guaranteed Avalanche Characteristics​
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Diode Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
Note :
1. The data tested by surface mounted on a 1 inch2
FR-4 board with 2OZ copper.
2. The data tested by pulsed , pulse width ≦ 300us , duty cycle ≦ 2%
3. The power dissipation is limited by 150℃ junction temperature 4.The data is theoretically the same as ID and IDM , in real applications , should be limited by total power dissipation.
N-Channel Typical Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge
P-Channel Typical Characteristics
WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate ChargeWSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge

Product Tags:

n channel mosfet transistor

      

high voltage transistor

      
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WSF6012 Silicon Mosfet Power Transistor N/P Channel MOSFET Low Gate Charge Images

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