18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

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Shenzhen Hua Xuan Yang Electronics Co.,Ltd

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18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

Name: 18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application
Brand: Hua Xuan Yang
Price: 1 USD

Place of Origin : ShenZhen China

Brand Name : Hua Xuan Yang

Certification : RoHS、SGS

MOQ : 1000-2000 PCS

Price : Negotiated

Packaging Details : Boxed

Delivery Time : 1 - 2 Weeks

Payment Terms : L/C T/T Western Union

Supply Ability : 18,000,000PCS / Per Day

Model Number : HXY2312

Product name : Mosfet Power Transistor

Junction temperature : 150℃

Material : Silicon

Case : Tape/Tray/Reel

Type : mosfet transistor

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18N20X 200V N-Channel Enhancement Mode MOSFET

Product Summary

The 18N20X uses advanced Plane technology to provide excellent RDS(ON), low gate charge and operation with gate voltages as low as 2.5V. This device is suitable for use as a Battery protection or in other Switching application.

18N20X 200V Mos Field Effect Transistor Low Gate Charge For Switching Application

Product Tags:

high current transistor

mosfet driver using transistor

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